IRF540N N-Channel HEXFET Power MOSFET

Description

• Part No: IRF540
• Drain to Source Voltage (Vdss): 100 V
• Current – Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
• Vgs (Max): ±20V
• Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
• Power Dissipation (Max): 130W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Compliant to RoHS directive 2002/95/EC

On resistance Rds(on) of 44mohm at Vgs of 10V; Power dissipation Pd of 130W at 25°C. 
Continuous drain current Id of 33A at Vgs 10V and 25°C; Operating junction temperature range from -55°C to 175°C.

The IRF540NP from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source voltage Vds is 100V; Gate to source voltage is 20V. On resistance Rds(on) of 44mohm at Vgs of 10V; Power dissipation Pd of 130W at 25°C. Continuous drain current Id of 33A at Vgs 10V and 25°C; Operating junction temperature range from -55°C to 175°C.

Explore more from our collection.