CDIL BFW11 N-Channel RF Transistor – High-Frequency Amplification Device

Description

• Transistor Polarity: N-Channel

• Drain-Source Voltage: 30VDC

• Drain-Gate Voltage: 30VDC

• Reverse Gate-Source Voltage: 30VDC

• Forward Gate Current: 10mA

• Gate-Source Cut-off Voltage: 6VDC

• Gate-Source Voltage: 4VDC

BFW11 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Featured . Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits

Features/Specs:

• Transistor Polarity: N-Channel

• Drain-Source Voltage: 30VDC

• Drain-Gate Voltage: 30VDC

• Reverse Gate-Source Voltage: 30VDC

• Forward Gate Current: 10mA

• Gate-Source Cut-off Voltage: 6VDC

• Gate-Source Voltage: 4VDC

• Zero-Gate Voltage Drain Current: 10mA

• Operating Temperature Range: -65 – 150°C

• Power Dissipation: 300mW

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