Description
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Max. Operating Junction Temperature (Tj): 175 °C
- Transition Frequency (ft): 150 MHz
BC108C series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.
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