1N5822 Schottky Rectifier Diode – Low Forward Voltage, High Efficiency

Description

The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. 

 

Features:-

• Extremely Low VF 

• Low Power Loss/High Efficiency 

• Low Stored Charge, Majority Carrier Conduction 

• Shipped in plastic bags, 500 per bag 

• Available in Tape and Reel, 1500 per reel, by adding a “RL” suffix to the part number 

• Pb-Free Packages are Available 

Mechanical Characteristics:-

• Case: Epoxy, Molded 

• Weight: 1.1 Gram (Approximately) 

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

• Polarity: Cathode indicated by Polarity Band 

Specification:-

Symbol	Parameter	Value	Units
VRRM	Peak Repetitive Reverse Voltage	40	V
VRWM	Working Peak Reverse Voltage	40	V
VR	DC Blocking Voltage	40	V
VR(RMS)	RMS Reverse Voltage	28	V
VRSM	Non−Repetitive Peak Reverse Voltage	48	V
IO	Average Rectified Output Current	3	A
IFSM	Non-Repetitive Peak Forward Surge Current	80	A
TJ	Operating Junction Temperature Range	− 65 to +125	°C
Tstg	Storage Temperature Range	− 65 to +125	°C

150°

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