P55NF06 N-Channel Power MOSFET – 60V, 50A, TO-220 Package

Description

• Low reverse transfer capacitance ( CRSS = typical 80 pF )
• RDS(ON) = 23m@VGS = 10 V 
• Ultra low gate charge ( typical 30 nC ) 
• Fast switching capability 
• Improved dv/dt capability

P55NF06/P55 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.

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