MJE350 PNP High-Voltage Bipolar Power Transistor

Description

Features:-

• High DC current gain

• Low collector−emitter saturation voltage

• High current−gain − bandwidth product

• Annular construction for low leakage

• Complementary NPN – PNP devices

MJE350 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• High DC current gain

• Low collector−emitter saturation voltage

• High current−gain − bandwidth product

• Annular construction for low leakage

• Complementary NPN – PNP devices

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