IRF530 N-Channel Power MOSFET – 100V, 14A Enhancement-Mode Transistor

Description

• Dynamic dV/dt rating
• Repetitive avalanche rated
• N-Channel
• Fast switching
• Max Drain-Source Voltage: 100V
• Max Gate-Source Voltage: + 20V
• Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 14A

IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

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