IRF510 Power MOSFET – N-Channel, TO-220

Description

Dynamic dV/dt rating
Repetitive avalanche rated
175 °C operating temperature
Fast switching
Ease of paralleling

—

IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

Explore more from our collection.