Description
| Collector Current-Max (IC) | 0.2 A |
| Collector-emitter Voltage-Max | 180.0 V |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 22.0 |
| JEDEC-95 Code | TO-39 |
| JESD-30 Code | O-MBCY-W3 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Temperature-Max | 175.0 Cel |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | NPN |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | NO |
| Terminal Form | WIRE |
| Terminal Position | BOTTOM |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 145.0 MHz |
| VCEsat-Max | 9.0 V |
Recommended Product Storage Environment for Discrete Semiconductor Devices:
- Temperature 5 °C to 30 °C ꞏ
- Humidity between 40 to 70 %RH ꞏ
- Air should be clean. ꞏ
- Avoid harmful gas or dust. ꞏ
- Avoid outdoor exposure or storage in areas subject to rain or water spraying . ꞏ
- Avoid storage in areas subject to corrosive gas or dust.
- Product shall not be stored in areas exposed to direct sunlight. ꞏ
- Avoid rapid change of temperature. ꞏ
- Avoid condensation. ꞏ
- Mechanical stress such as vibration and impact shall be avoided. ꞏ
- The product shall not be placed directly on the floor. ꞏ
- The product shall be stored on a plane area.
- They should not be turned upside down. They should not be placed against the wall.
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