Description
BS170 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Low offset voltage
• Full-voltage operation
• Easily driven without buffer
• Low error voltage
• No high-temperature run-away
• Excellent thermal stability
Detailed Specifications:-
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 60V
- Continuous Drain Current (Id) 500mA
- Drain-Source Resistance (Rds On) 5Ohms
- Gate-Source Voltage (Vgs) 20V
- Configuration Single
- Operating Temperature Range -55 – 150°C
- Power Dissipation (Pd) 350mW
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