Description
2N2907 PNP Switching Transistor
Specification/Feature
- Collector-Emitter Volt (Vceo): 40V
- Collector-Base Volt (Vcbo): 60V
- Collector Current (Ic): 0.6A
- hfe: 100-300 @ 150mA
- Power Dissipation (Ptot): 400mW
- Current-Gain-Bandwidth (ftotal): 200MHz
- Type: PNP
- NPN complements: 2N2222 and 2N2222A
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2N2907 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
Features:-
• Plastic TO-92 package
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability
Detailed Specifications:-
| Transistor Polarity | PNP |
| Collector-Base Voltage (VCBO) | 60V |
| Collector-Emitter Voltage (VCEO) | 60V |
| Emitter-Base Voltage (VEBO) | 5V |
| Continuous Collector Current (IC) | 600mA |
| Input Capacitance (Cib) | 30pF |
| Output Capacitance (Cob) | 8pF |
| DC Current Gain (hFE) | 100-300 |
| Operating Temperature Range | -55 – 200°C |
| Power Dissipation (PD) | 625mW |
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