1N60 Germanium Signal Diode – Low-VF, High-Speed

Description

The 1N60 Germanium Diode is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. 

Features:-

• Metal silicon junction, majority carrier conduction 

• High current capability, Low forward voltage drop 

• Extremely low reverse current lR 

• Ultra speed switching characteristics 

• Small temperature coefficient of forward characteristics 

• Satisfactory Wave detection efficiency 

• For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier

• Germanium Glass Diode 

• RoHS Compliance 

Mechanical Characteristics:-

• Case: DO-7, molded glass 

• Weight:0.2 gram 

• Terminals: Plated axial lead, solderable per MIL-STD-202E, Method 208 

• Polarity: Color band denotes cathode end 

Specification:-

Symbol	Parameter	Value	Units
VRRM	Peak Repetitive Reverse Voltage	40	V
VRM	Peak Reverse Voltage	45	V
VR	DC Blocking Voltage	20	V
IO	Average Rectified Output Current	50	A
IFSM	Non-Repetitive Peak Forward Surge Current	150	mA
TJ	Operating Junction Temperature Range	− 65 to +125	°C
Tstg	Storage Temperature Range	− 65 to +125	°C

* Product Images are shown for illustrative purposes only and may differ from actual product.

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