IRF520 N-Channel Power MOSFET – High-Speed Switching Transistor

Description

Specifications:

• Drain-to-Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 9.7A at 25°C
• Gate Threshold Voltage (Vgs(th)): 2.0V – 4.0V
• Rds(on) (On-Resistance): 0.27 ohms
• Total Gate Charge (Qg): 47nC

The IRF520 is an N-channel power MOSFET. It’s often used in switching applications due to its ability to handle high current and voltage. Here are some features of the IRF520:

Features:

• High voltage and current handling
• Low on-resistance for efficient switching
• Fast switching speed
• Rugged construction for reliability

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